Fabrication of p-Si/$\beta$-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
We have fabricated p-Si/$\beta$-FeSi2 film/n-Si double-heterstructure (DH) light-emitting diodes (LEDs) on Si(111) substrates by molecular beam epitaxy (MBE). It was found that both the thickness of an undoped Si overlayer and subsequent annealing temperature were key parameters in preventing the aggregation of the $\beta$-FeSi2 film and the successful formation of a Si/$\beta$-FeSi2 film/Si DH LED on Si(111). A 1.6 μm electroluminescence (EL) was realized at room temperature (RT) at a current density higher than 78 A/cm2 by increasing the thickness of the $\beta$-FeSi2 active region from 90 nm to 250 nm, suggesting that there exist numerous defects at Si/$\beta$-FeSi2 heterointerfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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Li Cheng
Institute for Laser Science, University of Electro-Communications
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Hasegawa Fumio
Institute Of Applied Physics University Of Tsukuba
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Suemasu Takashi
Institute Of Applied Physics University Of Tsukuba
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Takauji Motoki
Institute Of Applied Physics University Of Tsukuba
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Li Cheng
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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HASEGAWA Fumio
Institlite of Materials Science, University of Tsukuba
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Takauji Motoki
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennohdai, Tsukuba, Ibaraki 305-8573, Japan
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