Reactive Ion Etching of $\beta$-FeSi2 with Inductively Coupled Plasma
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概要
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A dry etching technique for a $\beta$-FeSi2 film on Si(111) was successfully developed. The technique is reactive ion etching (RIE) with inductively coupled plasma using CH4/O2/NH3/CHF3 discharge at a low pressure. It was found that CHF3 gas is indispensable in this etching technique, since CH4/O2/NH3 did not etch the film, and neither did SF6/O2, which is widely used for Si etching. Almost no further etching of the bottom Si substrate was observed and a carbon residual appeared on the surface, when the present RIE process using CH4/O2/NH3/CHF3 discharge was used to etch the entire $\beta$-FeSi2 film such that the Si substrate emerged. This experimental result shows a possibility of highly selective RIE for $\beta$-FeSi2/Si heterostructures.
- 2006-06-25
著者
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Akinaga Hiroyuki
Nanotechnology Research Institute National Institute Of Advanced Industrial Science And Technology
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Wakayama Takayuki
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Kanazawa Tomomi
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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Akinaga Hiroyuki
Nanotechnology Research Institute (NRI)/National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-0801, Japan
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Akinaga Hiroyuki
Nanotechnology Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan
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