Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2
スポンサーリンク
概要
- 論文の詳細を見る
Polycrystalline Ba1-xSrxSi2 films with Sr composition $x$ varying from 0 to 0.52 were grown on transparent fused silica substrates by molecular beam epitaxy. Optical absorption spectra measured at room temperature showed that the indirect absorption edge of Ba1-xSrxSi2 increases almost linearly with increasing $x$ and reaches approximately 1.40 eV when $x$ is 0.52. This result suggests that the band gap of Ba1-xSrxSi2 is increased by Sr addition.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-04-25
著者
-
Morita Kousuke
Institute Of Applied Physics University Of Tsukuba
-
Kobayashi Michitaka
Institute Of Applied Physics University Of Tsukuba
-
SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
関連論文
- Control of the Conduction Type of Nondoped High Mobility β-FeSi_2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios
- Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and Its Electrical Properties
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba_Sr_xSi_2
- Epitaxial Growth of Semiconducting BaSi_2 Thin Films on Si(111) Substrates by Reactive Deposition Epitaxy
- Direct Growth of [100]-Oriented High-Quality β-FeSi_2 Films on Si(001) Substrates by Molecular Beam Epitaxy(Semiconductors)
- Donor and Acceptor Levels in Undoped β-FeSi_2 Films Grown on Si (001) Substrates : Semiconductors
- Room Temperature 1.6 μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_2 Active Region
- Improvement of the Electrical Properties of β-FeSi_2 Films on Si(001)by High-Temperature Annealing
- Growth of Continuous and Highly (100)-Oriented β-FeSi_2 Films on Si(001) from Si/Fe Multilayers with SiO_2 Capping and Templates
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
- Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
- Aggregation of Monocrystalline β-FeSi_2 by Annealing and by Si Overlayer Growth
- Growth of Epitaxial β-FeSi_2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition
- Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
- Cubic Dominant GaN Growth on (OO1) GaAs Substrates by Hydride Vapor Phase Epitaxy
- Magnetotransport Properties of a Single-Crystalline β-FeSi_2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy
- Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000℃ with Halide Vapor Phase Epitaxy
- Improvement of 1.5 μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls in Si by High Temperature Annealing
- Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_2 Balls Embedded in Si Crystals
- Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
- Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Effect of Introducing $\beta$-FeSi2 Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-$\beta$-FeSi2/n-Si Heterointerface
- CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy
- Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers
- In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
- Improved Room-Temperature 1.6 μm Electroluminescence from $p$-Si/$\beta$-FeSi2/$n$-Si Double Heterostructures Light-Emitting Diodes
- Epitaxial Growth of Ferromagnetic Fe_3Si Films on CaF_2/Si(111) by Molecular Beam Epitaxy
- Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN
- Fabrication of p-Si/β-FeSi_2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy
- Fabrication and Current–Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction
- Growth of Nitride-Based Fe3N/AlN/Fe4N Magnetic Tunnel Junction Structures on Si(111) Substrates
- Reactive Ion Etching of $\beta$-FeSi2 with Inductively Coupled Plasma
- Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
- Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
- Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes
- Negative Anisotropic Magnetoresistance in \gamma'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy
- Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
- Time-Resolved Photoluminescence Study of Si/$\beta$-FeSi2/Si Structures Grown by Molecular Beam Epitaxy
- Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111)
- Magneto-Optical Studies of Ferromagnetic Cr-Doped GaN Films Grown by Molecular Beam Epitaxy
- Fabrication of p-Si/$\beta$-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy
- Formation of β-FeSi 2 Layers on Si(001) Substrates
- Disagreement between Magnetic and Magneto-Optical Properties in Cr-doped GaN Films on Si(111) Substrates Grown by Metal Organic Molecular Beam Epitaxy
- Growth and Characterization of Si-Based Light-Emitting Diode with $\beta$-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy
- Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current–Voltage Characteristics
- Epitaxial Growth of Semiconducting BaSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy
- Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy
- Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy
- Epitaxial Growth of Ferromagnetic Fe3Si Films on CaF2/Si(111) by Molecular Beam Epitaxy
- Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2
- Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C–SiC Intermediate Layers
- Optical Absorption Properties of BaSi2 Epitaxial Films Grown on a Transparent Silicon-on-Insulator Substrate Using Molecular Beam Epitaxy