Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2

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概要

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• Polycrystalline Ba1-xSrxSi2 films with Sr composition $x$ varying from 0 to 0.52 were grown on transparent fused silica substrates by molecular beam epitaxy. Optical absorption spectra measured at room temperature showed that the indirect absorption edge of Ba1-xSrxSi2 increases almost linearly with increasing $x$ and reaches approximately 1.40 eV when $x$ is 0.52. This result suggests that the band gap of Ba1-xSrxSi2 is increased by Sr addition.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-04-25

著者

• Morita Kousuke

  Institute Of Applied Physics University Of Tsukuba

• Kobayashi Michitaka

  Institute Of Applied Physics University Of Tsukuba

• SUEMASU Takashi

  Institlite of Materials Science, University of Tsukuba

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