Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
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概要
- 論文の詳細を見る
100-nm-thick BaSi2 epitaxial films were grown on Si(111) substrates by a two-step growth method including reactive deposition epitaxy (RDE) and molecular beam epitaxy (MBE). The Ba deposition rate and duration were varied from 0.25 to 1.0 nm/min and from 5 to 120 min during RDE, respectively. Plan-view transmission electron micrographs indicated that the grain size in the MBE-grown BaSi2 was significantly dependent on the RDE growth conditions and was varied from approximately 0.2 to more than 4 μm.
- 2012-09-25
著者
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Usami Noritaka
Institute For Material Research Tohoku University
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Khan M.
Institute Of Applied Physics University Of Tsukuba
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Saito Noriyuki
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Yoshizawa Noriko
Electron Microscope Facility, IBEC Innovation Platform, AIST, Tsukuba, Ibaraki 305-8569, Japan
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Toko Kaoru
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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SUEMASU Takashi
Institlite of Materials Science, University of Tsukuba
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Nakamura Kotaro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Baba Masakazu
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Du Weijie
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Koike Shintaro
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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Khan M.
Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
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