Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition

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概要

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• Epitaxial ZnO films are grown on sapphire ($\alpha$-Al2O3) (0001) substrates by metal-organic chemical vapor deposition under 6 and 0.05 Torr using diethyl zinc (DEZn, (C2H5)2Zn) and O2 as precursors and nitrogen as carrier gas. Measurements by X-ray diffraction and photoluminescence reveal that films grown under 6 Torr have better crystal quality. In ZnO films grown under both pressures, free excitonic transitions are observed by reflection. However, the emission behaviors are different. Low-temperature photoluminescence of the ZnO film grown under 6 Torr is dominated by donor-bound exciton emission, whereas that grown under 0.05 Torr exhibits strong acceptor-bound exciton emission, indicating pronounced acceptor incorporation in the latter. In-plane orientations of the ZnO films are well controlled by adjusting the growth process. Measurements by coaxial impact collision ion scattering spectroscopy (CAICISS) demonstrate that the ZnO films have +c polarity, regardless of their in-plane orientation. This finding differs from the results obtained by laser-molecular beam epitaxy where the polarity was found to depend on the in-plane orientation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-15

著者

• Lippmaa Mikk

  Institute Of Solid State Physics University Of Tokyo

• WAKATSUKI Katsuki

  Department of Physics, Graduate School of Science,Tohoku University

• OHNISHI Tsuyoshi

  Institute of Solid State Physics, University of Tokyo

• Manh Le-hong

  Photodynamics Research Center The Insititute Of Physical And Chemical Research (riken)

• Zhang Bao-ping

  Photodynamics Research Center The Insititute Of Physical And Chemical Research (riken)

• Usami Noritaka

  Institute For Material Research Tohoku University

• Segawa Yusaburo

  Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea

• Manh Le-hong

  Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Kawasaki Masashi

  Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Ohnishi Tsuyoshi

  Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• Ohnishi Tsuyoshi

  Institute of Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan

• LIPPMAA Mikk

  Institute for Solid State Physics, University of Tokyo

• Zhang Bao-Ping

  Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan

• Wakatsuki Katsuki

  Department of Physics, Graduate School of Science, Tohoku University, Aoba-ku, Sendai 980-8578, Japan

• Wakatsuki Katsuki

  Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan

• Segawa Yusaburo

  Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan

• OHNISHI Tsuyoshi

  Institute for Solid State Physics, The University of Tokyo

• LIPPMAA Mikk

  Institute for Solid State Physics, The University of Tokyo

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