Photo-Irresponsive Thin-Film Transistor with MgxZn1-xO Channel

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概要

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• If field-effect devices based on wide-band-gap semiconductors are ever to find wide application in real transparent electronics, their performance is required remain stable under visible light. In particular, a thin-film transistor (TFT) irresponsive to visible illumination has a practical advantage, if used for the switching of pixels in a liquid crystal display (LCD), because shadeless pixels make it possible to lower cost and power consumption. In this letter, we report such a TFT with a channel made of low-temperature-grown MgxZn1-xO film. This device with a polycrystalline Mg0.1Zn0.9O channel operated under illumination shows the same transfer characteristics as those in the dark when the wavelength is longer than 400 nm. The field-effect mobility was measured to be 0.8 cm2$\cdot$V-1$\cdot$s-1, comparable to that of amorphous Si-based TFTs used in commercial LCDs.

• 2006-07-25

著者

• Ohtomo Akira

  Institute For Materials Research Tohoku University

• MAKINO Takayuki

  Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research)

• Segawa Yusaburo

  Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea

• Koinuma Hideomi

  Materials And Structures Labolatory Tokyo Institute Of Technology

• Tamura Kentaro

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Kawasaki Masashi

  Institute For Chemical Research Kyoto University

• Takagi Shingo

  Materials And Structures Laboratory Tokyo Institute Of Technology

• Takagi Shingo

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Makino Takayuki

  Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Sendai 980-0845, Japan

• Segawa Yusaburo

  Photodynamics Research Center, RIKEN (Institute of Physical and Chemical Research), Sendai 980-0845, Japan

• Tamura Kentaro

  Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

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