High Mobility Thin Film Transistors with Transparent ZnO Channels
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概要
- 論文の詳細を見る
We have fabricated high performance ZnO thin film transistors (TFTs) using CaHfOx buffer layer between ZnO channel and amorphous silicon–nitride gate insulator. The TFT structure, dimensions, and materials set are identical to those of the commercial amorphous silicon (a-Si) TFTs in active matrix liquid crystal display, except for the channel and buffer layers replacing a-Si. The field effect mobility can be as high as 7 cm2$\cdot$V-1$\cdot$s-1 for devices with maximum process temperature of 300°C. The process temperature can be reduced to 150°C without much degrading the performance, showing the possibility of the use of polymer substrate.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2003-04-01
著者
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Ohtomo Akira
Institute For Materials Research Tohoku University
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Hossain Faruque
Institute For Materials Research Tohoku University
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Matsukura Fumihiro
Research Institute Of Electrical Communication Tohoku University
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Koinuma Hideomi
Materials And Structures Labolatory Tokyo Institute Of Technology
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Ohno Yuzo
Research Institute Of Electrical Communication Tohoku University
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Ohkubo Isao
Materials And Structures Laboratory Tokyo Institute Of Technology
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Ohmaki Yuji
Research Institute Of Electrical Communication Tohoku University
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Aita Tetsuya
Materials And Structures Laboratory Tokyo Institute Of Technology
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Nishii Junya
Institute For Materials Research Tohoku University
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Saikusa Koji
Materials And Structures Laboratory Tokyo Institute Of Technology
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Takagi Shingo
Institute For Materials Research Tohoku University
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Ohno Hideo
Research Institute Of Electrical Communication Tohoku University
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Kawasaki Masashi
Institute For Chemical Research Kyoto University
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Kishimoto Shuya
Research Institute Of Electrical Communication Tohoku University
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FUKUMURA Tomoteru
Institute for Materials Research
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Ohmaki Yuji
Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Ohno Yuzo
Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Takagi Shingo
Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Ohkubo Isao
Materials and Structures Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama 226-8503, Japan
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Kishimoto Shuya
Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Matsukura Fumihiro
Research Institute of Electrical Communication, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Nishii Junya
Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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Hossain Faruque
Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan
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