In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire ($\alpha$-Al2O3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition

スポンサーリンク

概要

• 論文の詳細を見る

• We report the control of the in-plane orientation of ZnO epitaxial films grown on as-polished sapphire ($\alpha$-Al2O3) (0001) substrates by metal organic chemical vapor deposition (MOCVD). When passing certain flows of Zn-precursor over the substrate before introducing oxygen-precursor at certain substrate temperatures, unit cells of the ZnO film show the same in-plane orientation as the substrate. Otherwise, 30° rotation is observed between unit cells of ZnO and the substrate. In case of using dietylzinc (DEZn) and oxygen gas as precursors, the substrate temperature and the flow rate of DEZn, under which no-twist ZnO films can be obtained, are determined experimentally. Measurements by coaxial impact collision ion scattering spectroscopy (CAICISS), however, demonstrate that the ZnO films all have $+c$ polarity, regardless of their in-plane orientation. This is different from the results obtained by laser-molecular beam epitaxy by which $+c$ polarity on as-polished sapphire (0001) substrates are hardly obtained. Since the $+c$ polarity film is preferable in applications of wurtzite semiconductors, our results reveal that MOCVD technique is particularly important in future applications of ZnO-related oxides.

• Japan Society of Applied Physicsの論文
• 2003-03-15

著者

• Lippmaa Mikk

  Institute Of Solid State Physics University Of Tokyo

• WAKATSUKI Katsuki

  Department of Physics, Graduate School of Science,Tohoku University

• OHNISHI Tsuyoshi

  Institute of Solid State Physics, University of Tokyo

• TAMURA Kentaro

  Photodynamics Research Center, The Insititute of Physical and Chemical Research (RIKEN)

• Manh Le-hong

  Photodynamics Research Center The Insititute Of Physical And Chemical Research (riken)

• Zhang Bao-ping

  Photodynamics Research Center The Insititute Of Physical And Chemical Research (riken)

• Usami Noritaka

  Institute For Material Research Tohoku University

• Segawa Yusaburo

  Photodynamics Research Center Frontier Research Program The Institute Of Physical And Chemical Resea

• Koinuma Hideomi

  Materials And Structures Labolatory Tokyo Institute Of Technology

• Kawasaki Masashi

  Institute For Chemical Research Kyoto University

• Ohnishi Tsuyoshi

  Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan

• LIPPMAA Mikk

  Institute for Solid State Physics, University of Tokyo

• Usami Noritaka

  Institute for Materials Research, Tohoku University, Aoba-ku, Sendai 980-8577, Japan

• Wakatsuki Katsuki

  Department of Physics, Graduate School of Science, Tohoku University, Aoba-ku, Sendai 980-8578, Japan

• OHNISHI Tsuyoshi

  Institute for Solid State Physics, The University of Tokyo

• LIPPMAA Mikk

  Institute for Solid State Physics, The University of Tokyo

• Tamura Kentaro

  Photodynamics Research Center, The Institute of Physical and Chemical Research (RIKEN), 519-1399 Aoba, Aramaki, Aoba-ku, Sendai 980-0845, Japan

関連論文

• Magneto-Optical Spectroscopy of Anatase TiO_2 Doped with Co
• Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
• In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire (α-Al_2O_3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
• Floating Zone Growth of Si Bicrystals Using Seed Crystals with Artificially Designed Grain Boundary Configuration
• All-Solid-State, THz Radiation Source Using a Saturable Bragg Reflector in a Femtosecond Mode-Locked Laser
• Ultraviolet picosecond pulses from an all-solid-state Ce : LiSAF master oscillator and Ce : LiCAF power amplifier system
• Direct picosecond-pulse train generation from a self-injection-seeded ultrashort solid-state laser
• Preparation of a TiO-2 Film Coated Si Device for Photo-Decomposition of Water by CVD Method Using Ti(OPr^i)_4
• Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Magnesium Concentration Dependence of Room-Temperature Absorption-Edge Singularity in Alloyed MgZnO Epilayers(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Magnetic Circular Dichroic Spectra of CuCl Thin Films
• Novel σ-π Alternating Polymers Having 2,2'-Bipyridyl in the Polymer Backbone and Their Ruthenium Complexes
• ZnCdSe Quantum Wires Achieved by Strain-Induced Lateral Confinement
• Self Formation and Optical Propertied of II-VI Semiconductor Wire Structures
• Molecular Beam Epitaxy of ZnSe Films and ZnCdSe/ZnSe Quantum Wells on Cleavage-Induced (110) Surfaces
• High Mobility Thin Film Transistors with Trasparent ZnO Channels
• Selective Isomerization of cis-Stilbene by Non-Resonant Two-Photon Excitation
• Photoreaction via Non-Resonant Two-Photon Excitation. Selective Silylene Extrusion from 2,2-Diphenyltrisilane
• Effect of a Magnetic Field on the Excitonic Luminescence Decay Time in a GaAs-Al_xGa_As Quantum Well
• Temperature-Dependent Soft X-ray Photoemission and Absorption Studies of Charge Disproportionation in La_Sr_xFeO_3(Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Modification of Local Structure and Its Influence on Electrical Activity of Near (310) *5 Grain Boundary in Bulk Silicon
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Origin of a Cluster of Bright Spots in Reverse Bias Electroluminescence Image of Solar Cells Based on Si Multicrystals
• On the Origin of Improved Conversion Efficiency of Solar Cells Based on SiGe with Compositional Distribution
• Evidence of the Presence of Built-in Strain in Multicrystalline SiGe with Large Compositional Distribution
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Growth of Si_xGe_(x〓0.15) Bulk Crystal with Uniform Composition Utilizing in situ Monitoring of the Crystal-solution Interface
• In Situ Measurement of Composition in High-Temperature Solutions by X-Ray Fluorescence Spectrometry
• Photochemical Identification of a Possible Adsorbed Pentacene Molecule on the SrTiO_3(001)
• Preparation of Atomically Smooth TiO_2 Single Crystal Surfaces and Their Photochemical Property
• The First Observation of ^1H-NMR Spectrum of Pentacene
• Local Magnetic Properties of Underdoped La_Sr_χ CuO_4 Single Crystal Probed by Scanning Superconducting Quantum Interference Device Microscopy : Superconductors
• Molecular layer-by-layer growth of C-60 thin films by continuous-wave infrared laser deposition
• X-Ray Magnetic Circular Dichroism and Structural Model for Co-Doped TiO_2 (Anatase) Thin Film (Condensed Matter : Structure, Mechanical and Thermal Properties)
• Temperature Dependence of Absorption Spectra in Anatase TiO_2 Epilayers
• Temperature Dependence of Absorption Spectra in Anatase TiO_2 Epilayers
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• Photo-Irresponsive Thin-Film Transistor with Mg_xZn_O Channel
• Metallic LaTiO_3 / SrTiO_3 Superlattice Films on the SrTiO_3(100) Surface
• Magnetic Properties of Strain-Controlled SrRuO_3 Thin Films
• Combinatorial Synthesis of Transition Metal Oxide Superlattices (特集:表面科学研究のコンビナトリアルケミストリー)
• Magnetic and Transport Properties of Mn-Based Fractional-Layer Oxide Superlattices
• Rapid Synthesis and Scanning Probe Analysis of Ba_xSr_TiO_3 Composition Spread Films on a Temperature Gradient Si(100) Substrate : Electrical Properties of Condensed Matter
• On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Silicon Thin Films Grown by Aluminum-Induced Crystallization
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Toward high-efficiency thin-film solar cells using semiconducting BaSi_2(Session 1A : Emerging Device Technology 1)
• Photoresponse Properties of Polycrystalline BaSi_2 Films Grown on SiO_2 Substrates Using (111)-Oriented Si Layers by an Aluminum-Induced Crystallization Method
• Fabrication of n^+-BaSi_2/p^+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications
• Growth of Compositionally Graded SiGe Bulk Crystal and Its Application As Substrate with Lateral Variation in Ge Content
• In situ Observation of Polycrystalline Silicon Thin Films Grown Using Aluminum-Doped Zinc Oxide on Glass Substrate by the Aluminum-Induced Crystallization
• Photo-Irresponsive Thin-Film Transistor with MgxZn1-xO Channel
• Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
• Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
• Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n-BaSi/p-Si Tunnel Junction to Undoped BaSi Overlayers (Special Issue : Solid State Devices and Materials (2))
• Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN (Special Issue : Solid State Devices and Materials (2))
• High-Temperature Solution Growth and Characterization of Chromium Disilicide
• Generation and Wavelength Control of Resonant Luminescence from Silicon Photonic Crystal Microcavities with Ge Dots
• Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
• Annihilation of Acceptor–Hydrogen Pairs in Si Crystals Due to Electron Irradiation
• Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films
• Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate (Special Issue : Photovoltaic Science and Engineering)
• Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111)
• Large-Grain Polycrystalline Silicon Films Formed through Flash-Lamp-Induced Explosive Crystallization
• Epitaxy of Orthorhombic BaSi2 with Preferential In-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature
• Ultrafast Exciton Dynamics in a ZnO Thin Film
• In-Plane Orientation and Polarity of ZnO Epitaxial Films on As-Polished Sapphire ($\alpha$-Al2O3) (0001) Substrates Grown by Metal Organic Chemical Vapor Deposition
• Epitaxial Growth and Polarity of ZnO Films on Sapphire (0001) Substrates by Low-Pressure Metal Organic Chemical Vapor Deposition
• Computational Investigation of Relationship between Shear Stress and Multicrystalline Structure in Silicon
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• High-Quality Polycrystalline Silicon Films with Minority Carrier Lifetimes over 5 μs Formed by Flash Lamp Annealing of Precursor Amorphous Silicon Films Prepared by Catalytic Chemical Vapor Deposition
• Free-Carrier Effects on Zero- and One-Phonon Absorption Onsets of $n$-Type ZnO
• Structural and Optical Properties of ZnO Epitaxial Films Grown on Al2O3 ($11\bar{2}0$) Substrates by Metalorganic Chemical Vapor Deposition
• Realization of Bulk Multicrystalline Silicon with Controlled Grain Boundaries by Utilizing Spontaneous Modification of Grain Boundary Configuration
• High-Quality Crystalline Silicon Layer Grown by Liquid Phase Epitaxy Method at Low Growth Temperature
• Impact of Defect Density in Si Bulk Multicrystals on Gettering Effect of Impurities
• Successful Growth of InxGa1-xAs ($x>0.18$) Single Bulk Crystal Directly on GaAs Seed Crystal with Preferential Orientation
• High-Efficiency Concave and Conventional Solar Cell Integration System Using Focused Reflected Light
• Analysis of the Dark-Current Density in Solar Cells Based on Multicrystalline SiGe
• Relationship between Device Performance and Grain Boundary Structural Configuration in a Solar Cell Based on Multicrystalline SiGe
• Functional Enhancement of Metal–Semiconductor–Metal Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co
• Fabrication of SiGe-on-Insulator through Thermal Diffusion of Ge on Si-on-Insulator Substrate
• Liquid Phase Epitaxial Growth of Si Layers on Si Thin Substrates from Si Pure Melts under Near-Equilibrium Conditions
• Control of Grain Boundary Propagation in Mono-Like Si : Utilization of Functional Grain Boundaries

もっと見る 閉じる

スポンサーリンク