Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2008-12-25
著者
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USAMI Noritaka
Institute for Materials Research, Tokoku University
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Usami Noritaka
Tohoku Univ. Miyagi Jpn
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NAKAGAWA Kiyokazu
Center for Crystal Science and Technology, University of Yamanashi
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Usami Noritaka
Institute For Material Research Tohoku University
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Sawano Kentarou
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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SAWANO Kentarou
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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HOSHI Yusuke
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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YAMADA Atsunori
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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HIRAOKA Yoshiyasu
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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ARIMOTO Keisuke
Center for Crystal Science and Technology, University of Yamanashi
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SHIRAKI Yasuhiro
Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology
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Hoshi Yusuke
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Yamada Atsunori
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Nakagawa Kenichi
Liquid Ctystal Laboratories Sharp Corporation
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Hirose Yoshihisa
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Shiraki Y
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Nakagawa K
Center For Crystal Science And Technology University Of Yamanashi
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Arimoto Keisuke
Center For Crystal Science And Technology University Of Yamanashi
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Nakagawa Kiyokazu
Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan
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