Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates

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概要

• 論文の詳細を見る
• 2004-08-20

著者

• OZAWA Yusuke

  Musashi Institute of Technology

• YAMANAKA Junji

  Center for Crystal Science and Technology, University of Yamanashi

• NAKAGAWA Kiyokazu

  Center for Crystal Science and Technology, University of Yamanashi

• HATTORI Takeo

  Musashi Institute of Technology

• Sawano Kentarou

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• SUZUKI Kumiko

  Center for Crystal Science and Technology, Yamanashi University

• Ozawa Yusuke

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Nakagawa Kenichi

  Liquid Ctystal Laboratories Sharp Corporation

• Suzuki Kumiko

  Center For Crystal Science And Technology University Of Yamanashi

• Koh S

  Institute For Solid State Physics University Of Tokyo

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Koh S

  The University Of Tokyo

• Yamanaka J

  Center For Crystal Science And Technology University Of Yamanashi

• SAWANO Kentaro

  Musashi Institute of Technology

• KOH Shinji

  The University of Tokyo

• SHIRAKI Yasuhiro

  The University of Tokyo

• Nakagawa K

  Center For Crystal Science And Technology University Of Yamanashi

• Nakagawa Keisuke

  Department Of Applied Physics Faculty Of Science Science University Of Tokyo

• Yamanaka Junji

  Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan

• Nakagawa Kiyokazu

  Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan

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