Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates

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概要

• 論文の詳細を見る
• 2003-07-01

著者

• SAWANO Kentarou

  Department of Applied Physics, The University of Tokyo

• HIROSE Yoshihisa

  Musashi Institute of Technology

• OZAWA Yusuke

  Musashi Institute of Technology

• KOH Shinji

  Department of Applied Physics, The University of Tokyo

• YAMANAKA Junji

  Center for Crystal Science and Technology, University of Yamanashi

• NAKAGAWA Kiyokazu

  Center for Crystal Science and Technology, University of Yamanashi

• HATTORI Takeo

  Musashi Institute of Technology

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• Sawano Kentarou

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Ozawa Yusuke

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Hoshi Yusuke

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Nakagawa Kenichi

  Liquid Ctystal Laboratories Sharp Corporation

• Hirose Yoshihisa

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Koh S

  Institute For Solid State Physics University Of Tokyo

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Koh S

  The University Of Tokyo

• Koh Shinji

  Department Of Applied Physics The University Of Tokyo

• Yamanaka J

  Center For Crystal Science And Technology University Of Yamanashi

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• Nakagawa K

  Center For Crystal Science And Technology University Of Yamanashi

• Yamanaka Junji

  Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan

• Nakagawa Kiyokazu

  Center for Crystal Science and Technology, Faculty of Engineering, University of Yamanashi, Kofu 400-8511, Japan

関連論文

• Comparison of Nonlocal and Local Magnetoresistance Signals in Laterally Fabricated Fe_3Si/Si Spin-Valve Devices
• Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
• Effect of Atomic and Molecular Hydrogen Irradiation on Ge Surface Segregation during Si Molecular Beam Epitaxy
• Microstructure of Visible Light Emitting Porous Silicon
• Fine Structure of Porous Si with Visible Photoluminescence
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Optical Investigations of Solid-Phase Crystallization of Si_Ge_x
• Optical Investigations of Solid-Phase Crystallization (SPC) Properties of Si_Ge_X
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Atomic-Layer Doping in Si_Ge_x/Si/Si_Ge_x Heterostructures by Two-Step Solid-Phase Epitaxy
• Surface Segregation Behaviors of B, Ga, and Sb during Si Molecular Beam Epitaxy : Calculation Using a First-Principles Method
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Surface Segregation Behaviors of B, Ga, and Sb during Si-MBE : Calculation Using a First-Principle Method
• Quantitative Correlation between the Surface Segregation of Ge and the Light Emission of Si/SiGe/Si Heterostructures
• Ultrahigh Electron Mobilities in Si_Ge_x/Si/Si_Ge_x Heterostructures with Abrupt Interfaces Formed by Solid-Phase Epitaxy
• Local-Symmetry Induced Light Emission from Si/Si_Ge_x/Si Quantum Wells
• GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• 1/f Fluctuations in LiCl Solution
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• Optical Absorption in Silicon Oxide Film Near the SiO_2/Si Interface
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Cross-Sectional Observation of Surface Graphitization in Furan-Resin-Derived Carbon
• Cage Structure Development in Furan-Resin-Derived Carbon
• Relationship between Molecular Orientation and Optical Memory Angle of Surface-Stabilized Ferroelectric Liquid Crystals
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Effect of Molecular Structure of Chiral Fluorinated Compounds on Spontaneous Polarization of Ferroelectric Liquid Crystals
• Tilt Angle Behavior of Smectic C Phase in Binary Systems
• Distribution of Dislocations in SrTiO_3 Single Crystals
• GaAlAs/GaAs Optical Beam Scanner Using Phased Array Waveguides
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Nanostructure Fabrication Based on Sporntaneous Formation Mechanisms
• Formation of High-Density Etch Pits on a Si Surface after Low-Temperature Heating in an Ultrahigh Vacuum
• X-Ray Double-Crystal Diffractometry of Verneuil-Grown SrTiO_3 Crystals : Structure and Mechanical and Thermal Properties of Condensed Matter
• Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
• Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
• Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
• Formation of Tensilely Strained Germanium-on-Insulator
• Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• Room-Temperature Observation of Size Effects in Photoluminescence of Si_Ge_/Si Nanocolumns Prepared by Neutral Beam Etching
• Si Ion Implantation into Mg-Doped GaN for Fabrication of Reduced Surface Field Metal–Oxide–Semiconductor Field-Effect Transistors
• Study on Sublattice Reversal in a GaAs/Ge/GaAs(001) Crystal by X-ray Standing Waves
• Strain State and Thermal Stability of Strained-Si-on-Insulator Substrates
• Electric Characteristics of Si3N4 Films Formed by Directly Radical Nitridation on Si(110) and Si(100) Surfaces
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• New Structure of Polycrystalline Silicon Thin-Film Transistor with Germanium Layer in Source/Drain Regions for Low-Temperature Device Fabrication
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Effects of Electron-Cyclotron-Resonance Oxygen Plasma Irradiation on Properties of Insulator/Ge-Semiconductor Interfaces Prior to Germanium Nitride Formation
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates

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