GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-06-01

著者

• Onabe Kentaro

  Department Of Applied Physics The University Of Tokyo

• SHIRAKI Yasuhiro

  Department of Applied Physics, The University of Tokyo

• ZHANG Xiao

  National Laboratory for High Energy Physics

• ZHANG Xiong

  Basic Research Department, Olympus Optical Co., Ltd.

• KARAKI Koichi

  Basic Research Department, Olympus Optical Co., Ltd.

• YAGUCHI Hiroyuki

  Research Center for Advanced Science and Technology, The University of Tokyo

• ONABE Kentaro

  Research Center for Advanced Science and Technology, The University of Tokyo

• ITO Ryoichi

  Research Center for Advanced Science and Technology, The University of Tokyo

• Yaguchi Hiroyuki

  Research Center For Advanced Science And Technology University Of Tokyo

• Zhang X

  High Energy Accelerator Res. Organization (kek) Ibaraki Jpn

• Karaki Koichi

  Basic Research Department Olympus Optical Co. Ltd.

• Shiraki Yasuhiro

  Department Of Applied Physics And Physico-informatics Keio University

• SHIRAKI Yasuhiro

  Department of Applied Pysics, The University of Tokyo

関連論文

• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• Optical Properties of Strain-Balanced Si_Ge_ Planar Microcavities on Si Substrates
• Interference of Nuclear Bragg Scattered X-Rays in X-Ray Interferometer with Large Optical Path Difference
• Time Domain Interferometry in X-Ray Region Using Nuclear Resonant Scattering
• Time-Delayed Interferometry with Nuclear Resonant Scattering of Synchrotron Radiation
• Flux Growth and Characterization of α-^Fe_2O_3 Single Crystals for Nuclear Bragg Scattering Optical Components
• X-Ray Standing Wave Analysis of GaAs/Si Interface
• High-Resolution Measurements of Nuclear Bragg Scattering from a Synthetic α-^Fe_2O_3 Crystal
• Light-Emitting Substituted Polyacetylenes
• Conducting Polymer-C_ Heterojunctions : Polarity-Independent Electroluminescent Cells
• Electroluminescent Devices Based on Poly (diphenylacetylene) with Carbazolyl Side Groups
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography
• Self Formation and Optical Propertied of II-VI Semiconductor Wire Structures
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
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• Mossbauer Time Spectra of the Nuclear Forward Scattering from Coherently Vibrating Resonant Nuclei
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• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Nuclear Excitation of ^Fe Ions in Hydrochloric Acid Solution Using Synchrotron Radiation
• Exciton-Neutral-Donor Complexes in Semiconductor Quantum Dots
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• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Nuclear Resonant Excitation of ^Dy and ^Eu by Synchrotron Radiation
• Characterization of Sb Atomic-Layer-Doped Si(100) Crystal by X-Ray Standing Wave Method
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
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• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• Anisotropy of Upper Critical Field in Superconducting 2H-NbS_2
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Characterization of amorphous-Si/1ML-Ge/Si(001) Interface Structure by X-ray Standing Waves
• Three-Dimensional Reconstruction of Atoms in Surface X-Ray Diffraction
• High Sensitive Imaging of Atomic Arrangement of Ge Clusters Buried in a Si Crystal by X-ray Fluorescence Holography

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