Band Structure of GaP_<1-x>N_x(x=0.25, 0.5, 0.75) Ordered Alloys : Semiempirical Tight-Binding Calculation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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Onabe Kentaro
Department Of Applied Physics The University Of Tokyo
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MIYOSHI Seiro
Department of Applied Physics, The University of Tokyo
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Miyoshi Seiro
Department Of Applied Physics The University Of Tokyo
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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- Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
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- High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
- Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
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- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
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- Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
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- Development of Novel System Combining Scanning Tunneling Microscope-Based Cathodoluminescence and Electroluminescence Nanospectroscopies
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