Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

スポンサーリンク

概要

• 論文の詳細を見る
• 1999-09-20

著者

• Onabe Kentaro

  Department Of Applied Physics The University Of Tokyo

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• YAGUCHI Hiroyuki

  Department of Applied Physics, The University of Tokyo

• Wu J

  Key Lab. Of Marine Bio-resources Sustainable Utilization South China Sea Inst. Of Oceanology Chinese

• Wu Jun

  Department Of Applied Physics The University Of Tokyo

• Wu Jun

  Guangdong Key Lab. Of Marine Materia Medica South China Sea Inst. Of Oceanology Chinese Acad. Of Sci

• KIMURA Tokuharu

  Department of Applied Physics, The University of Tokyo

• YOSHIDA Seikoh

  Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd

• Oki K

  Department Of Materials Science And Technology Graduate School Of Engineering Sciences Kyushu Univer

• Wu Jun

  Department Of Microbiology Kumamoto University School Of Medicine

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Yaguchi H

  Division Of Mathematics Electronics And Informatics Graduate School Of Science And Engineering Saita

• Yaguchi Hiroyuki

  Department Of Applied Physics The University Of Tokyo

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Yoshida Seikoh

  Yokohama R&d Laboratories The Furukawa Electric Co. Ltd

• Yoshida Seikoh

  Yokohama R & D Laboratories The Furukawa Electric Co. Ltd.

• Kimura Tokuharu

  Department Of Applied Physics The University Of Tokyo

• Onabe K

  Department Of Advanced Materials Science The University Of Tokyo:department Of Applied Physics The U

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Onabe Kentaro

  Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan

関連論文

• Phenylephrine induces elevated RhoA activation and smooth muscle α-actin expression in Pkd2^ vascular smooth muscle cells
• Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Study on the Chemical Constituents of the South China Sea Gorgonian Junceella juncea
• Glycerol Derivatives and Sterols from Sargassum parvivesiculosum
• Self Formation and Optical Propertied of II-VI Semiconductor Wire Structures
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Cooliatin, an Unprecedented Natural Dioxocyclononane from Dinoflagellate Coolia monotis from South China Sea
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Xylogranatins A-D, New Mexicanolides from the Fruit of a Chinese Mangrove Xylocarpus granatum
• A New Unsaturated Glycoglycerolipid from a Cultured Marine Dinoflagellate Amphidinium carterae
• New Aliphatic Alcohol and (Z)-4-Coumaric Acid Glycosides from Acanthus ilicifolius
• A Study on the Speeding Up of the Motion of a Flexible Robot Arm
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• Solid-Phase Diffusion of Carbon into GaN Using SiNx/CNx/GaN Structure
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• GaAsP Layers Grown on (111)-Oriented GaAs Substrates by Metalorganic Vapor Phase Epitaxy
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Control of Macroscopic Absorption Coefficient of Multicrystalline SiGe by Microscopic Compositional Distribution : Semiconductors
• Determination of serum aluminium using an ion-pair reversed-phase high-performance liquid chromatographic-fluorimetric system with lumogallion
• Measurements of the Depth Profile of the Refractive Indices in Oxide Films on SiC by Spectroscopic Ellipsometry
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Low On-Voltage Operation AlGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure(Power Devices, Fundamental and Application of Advanced Semiconductor Devices)
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Low On-Voltage Operation GaN Based Field Effect Schottky Barrier Diode(Session A7 High Power Devices)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
• Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
• Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
• Characterization of Oxide Films on SiC by Spectroscopic Ellipsometry
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
• Band Structure of GaP_N_x(x=0.25, 0.5, 0.75) Ordered Alloys : Semiempirical Tight-Binding Calculation
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
• A Fabrication of Very Low Contact Resistance AIGaN/GaN Heterojunction Field-Effect Transistor Using Selective Area Growth Technique by Gas-Source Molecular Beam Epitaxy : Optics and Quantum Electronics
• Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• An 18-Norspirostanol Saponin with Inhibitory Action against COX-2 Production from the Underground Part of Trillium tschonoskii
• Speciation of Aluminium in Urine
• Enhanced Vascular Permeability in Solid Tumor Involving Peroxynitrite and Matrix Metalloproteinases
• Early Phase Tumor Accumulation of Macromolecules : A Great Difference in Clearance Rate between Tumor and Normal Tissues
• Anisotropy of Upper Critical Field in Superconducting 2H-NbS_2
• Photoluminescence of Erbium Implanted in SiGe
• Optical Constants of Cubic GaN, AlN, and AlGaN Alloys
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Evolution of Fluorine Content with Precipitate Formation in Fluorine-Doped Silicon Oxide
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Response Properties of Primary Somatosensory Cortical Neurons during the Detection of Changes in Tooth Pulp Stimulus Intensity in Monkeys
• Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
• Knockdown of Checkpoint Kinase 1 Is Associated with the Increased Radiosensitivity of Glioblastoma Stem-Like Cells
• Time-Evolution of〈1/2 1/2 1/2〉Special Point Ordering in fcc-Based Binary Alloys Studied by Monte Carlo Simulation
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy

もっと見る 閉じる

スポンサーリンク