Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-02-01
著者
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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AKIYAMA Hidefumi
Research Center for Advanced Science and Technology, University of Tokyo
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TAKEUCHI Tetsuya
Hewlett Packard Laboratories
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Takeuchi Tetsuya
Hewlett-packard Labs.
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HANAMAKI Yoshihiko
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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WATANUKI Yoshiyuki
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Watanuki Yoshiyuki
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Akiyama Hidefumi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Hanamaki Yoshihiko
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Ogasawara Nagaatsu
Department Of Electronics Engineering University Of Electro- Communications
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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