Dispersion of the Linewidth Enhancement Factor in Semiconductor Injection Lasers
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概要
- 論文の詳細を見る
The dispersion of the linewidth enhancement factor x in an AlGaAs injection laser has been determined from the changes in spontaneous emission spectra as bias current is varied below threshold. It is demonstrated that the results are in good agreement with a simple model which takes account of the gain spectra and the associated anomalous dispersion of the refractive index in parabolic bands.
- 社団法人応用物理学会の論文
- 1984-07-20
著者
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OGASAWARA Nagaatsu
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Tone Kiyoshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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NAKAE Hiroshi
Department of Applied Physics, Faculty of Engineering, University of Tokyo
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Ogasawara Nagaatsu
Department Of Applied Physics Faculty Of Engineering The University Of Tokyo
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Nakae Hiroshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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