Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
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概要
- 論文の詳細を見る
We propose a lateral confinement enhanced rectangular AlGaAs/AlAs quantum wire (QWR) structure grown in situ, which utilizes the Ga-rich AlGaAs spontaneous vertical quantum wells formed during the growth of the AlGaAs epilayer in the V-grooves. AlGaAs/AlAs QWR structures have been grown on V-grooved substrates by low-pressure metalorganic vapor phase epitaxy (MOVPE), and been investigated by transmission electron microscopy, photoluminescence and cathodoluminescence measurements.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Usami Noritaka
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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PAN Wugen
Department of Applied Physics, Faculty of Engineering, The University of Tokyo
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Yaguchi Hiroyuki
Department Of Applied Physics The University Of Tokyo
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Ito Ryoichi
Department Of Applied Physics Faculty And Engineering University Of Tokyo
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Onabe Kentaro
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Onabe Kentaro
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo, Kashiwa, Chiba 277-8561, Japan
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Ito Ryoichi
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Shiraki Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo,
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Yaguchi Hiroyuki
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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Usami Noritaka
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo,
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Pan Wugen
Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113, Japan
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