A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor

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概要

• 論文の詳細を見る
• 2002-11-01

著者

• WU San

  Department of Electronics Engineering, Cheng Shiu University

• CHANG Shoou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• KOH Shinji

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Shiraki Yasuhiro

  School Of Fundamental Science And Technology Keio University

• Wu S

  Department Of Electronics Engineering Cheng Shiu University

• Wu San

  Department Of Electronics Engineering Cheng Shiu Institute Of Technology

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Shiraki Y

  Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol

• Chang S

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Chang Shoou

  Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien

• LEE Chun

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi

• MIURA Atsushi

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Koh Shinji

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Miura Atsushi

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Shiraki Yasuhiro

  Research Center For Advanced Science And Technology (rcast) The University Of Tokyo

• Lee Chun

  Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit

関連論文

• Strain Relaxation and Induced Defects in SiGe Thin Films Grown on Ion-Implanted Si Substrates
• Magneto-photoluminescence Studies of AlInAs/AlGaAs Self-assembled Quantum Dots with Type-II Band Alignment (Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties)
• Observation of Band Alignment Transition from Type-I to Type-II in AlInAs/AlGaAs Self-assembled Quantum Dots
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• Enhancement of Strain Relaxation of SiGe Thin Layers by Pre-Ion-Implantation into Si Substrates
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
• Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire-Like Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by Metalorganic Vapor Phase Epitaxy
• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
• Rectangular AlGaAs/AlAs Quantum Wires Using Spontaneous Vertical Quantum Wells
• The in Situ Growth of Lateral Confinement Enhanced Rectangular AlGaAs/AlAs Quantum Wires by Utilizing the Spontaneous Vertical Quantum Wells
• Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
• Photoreflectance Study of Interface Roughness in Ge/SiGe Strained-Layer Heterostructures
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscope Observation of Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy with Dimethylhydrazine on (001) GaAs
• Metal-Organic Vapor Phase Epitaxy Growth and Optical Study of GaAs/GaAs_P_x Strained-Barrier Single Quantum Well Structures
• Introduction of Uniaxial Strain into Si/Ge Heterostructures by Selective Ion Implantation
• Development of Thin SiGe Relaxed Layers with High-Ge Composition by Ion Implantation Method and Application to Strained Ge Channels
• On Effects of Gate Bias on Hole Effective Mass and Mobility in Strained-Ge Channel Structures
• Thickness Dependence of Strain Field Distribution in SiGe Relaxed Buffer Layers
• Strain-Field Evaluation of Strain-Relaxed Thin SiGe Layers Fabricated by Ion Implantation Method
• Optical Detection of Interdiffusion in Strained Si_Ge_x/Si Quantum Well Structures
• Photoluminescence of Si_Ge_x/Si Quantum Welts with Abrupt Interfaces Formed by Segregant-Assisted Growth
• Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
• Luminescence from Strained Si_Ge_x/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
• Photogeneration and Transport of Carriers in Strained Si_Ge_x/Si Quantum Well Structures
• Quantum Size Effect of Excitonic Band-Edge Luminescence in Strained Si_Ge_x/Si Single Quantum Well Structures Grown by Gas-Source Si Molecular Beam Epitaxy
• Band-Edge Luminescence of Strained Si_xGe_/Si Single Quantum Well Structures Grown on Si(111) by Si Molecular Beam Epitaxy
• Electroluminescence from Strained SiGe/Si Quantum Well Structures Grown by Solid Source Si Molecular Beam Epitaxy
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ 進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Structural Disorder and Optical Property of InGaAsN Alloy Semiconductor (小特集テーマ:進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Channel Width Dependence of Mobility in Ge Channel Modulation-Doped Structures
• Si/1ML-Ge/Si(001) Interface Structure Characterized by Surface X-Ray Diffraction and X-Ray Standing-Wave Method
• Photoreflectance Study of GaAs/GaAsP Strained-Barrier Quantum Well Structures
• Dependence of Band Offsets on Elastic Strain in GaAs/GaAs_P_x Strained-Layer Single Quantum Wells
• Compositional Latching in GaAs_P_x/GaAs Metalorganic Vapor Phase Epitaxy
• MBE-Related Surface Fegregation of Dopant Atoms in Silicon : Condensed Matter
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Critical Displacement of Host-Atoms for Amorphization in Germanium Induced by Arsenic Implantation
• Observation of Pronounced Effect of Compressive Strain on Room-Temperature Transport Properties of Two-Dimensional Hole Gas in a Strained Ge Quantum Well
• Room-temperature Transport Properties of High Drift Mobility Two-dimensional Electron Gas Confined in a Strained Si Quantum Well
• Quantitative Evaluation of Silicon Displacement Induced by Arsenic Implantation Using Silicon Isotope Superlattices
• Demonstration of holes in strained Ge quantum wells with much higher drift mobility and density than that of electrons in strained Si channels
• Strain Relaxation and Surface Morphology of Ultrathin High Ge Content SiGe Buffers Grown on Si(001) Substrate
• Fabrication of InGaAs Vertical-Cavity Surface-Emitting Laser by Molecular Beam Epitaxy and Its Room-Temperature Operation on (411)A GaAs Substrates
• Mobility Enhancement in Strained Ge Heterostructures by Planarization of SiGe Buffer Layers Grown on Si Substrates
• Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Photoluminescence of Erbium Implanted in SiGe
• Fabrication of GaAs Ultrafine Gratings by Single-Layer-Masked SiCl_4 Reactive Ion Etching
• Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
• Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
• High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel
• Investigation of Impact Ionization in Strained-Si nMOSFETs
• A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
• Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
• Disappearance of the Breakdown of Quantum Hall Effects in Short Devices
• Optical Properties of Excitons in Semiconductor Quantum Wells
• Oscillator Strength of Excitons in InGaAs/GaAs Quantum Wells
• Nonlinear Optical Coefficient of AlAs Thin Film on GaAs Substrate
• Deposition of SiO_2 Films on Strained SiGe Layer by Direct Photo Chemical Vapor Deposition
• Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
• Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
• Strain Relaxation in MBE-Grown Si_Ge_x/Si(100) Heterostructures by Annealing
• Realization of Abrupt Interfaces in Si/Ge Superlattices by Suppressing Ge Surface Segregation with Submonolayer of Sb
• Temperature Dependence of Excitonic $\Gamma_{\text{c}}$–$\Gamma_{\text{v}}$ Transition Energies of GaxIn1-xP Crystals
• The Γ_c-Γ_v Transition Energies of Al_xIn_P Alloys
• Built-in Electric Field Strength in InP/n^+-InP Determined by Photoellipsometry and Photoreflectance
• Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
• Well Width Dependence of the Exciton Phonon Interaction in Semiconductor Quantum Wells
• Acceptorlike Behavior of Defects in SiGe Alloys Grown by Molecular Beam Epitaxy
• Line Width Dependence of Anisotropic Strain State in SiGe Films Induced by Selective Ion Implantation
• Room-Temperature Observation of Size Effects in Photoluminescence of Si.Ge./Si Nanocolumns Prepared by Neutral Beam Etching
• Formation of Tensilely Strained Germanium-on-Insulator
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Acceptor-Like States in SiGe Alloy Related to Point Defects Induced by Si Ion Implantation
• Room-Temperature Electroluminescence from Ge Quantum Dots Embedded in Photonic Crystal Microcavities
• Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
• Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
• Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
• Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
• Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

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