Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
A working p-type SiGe double-quantum-well metal–oxide–semiconductor field effect transistor (DQW-pMOSFETs) has been fabricated and characterized. The upper quantum well with 15%-Ge acts as an induced-carrier buffer to slow holes into the Si surface channel and increases the number of high-mobility holes in the 30%-Ge well at the bottom under high gate voltage by improving carrier confinement. DQW devices with a thinner Si-spacer layer between the two SiGe quantum wells exhibit an improved effective hole mobility and wider gate voltage swings but also reduced $1/ f$ noise levels than Si-controlled pMOSFETs. The DQW has an enhanced carrier confinement compared to a single quantum-well (SQW) device; however, the degradation of mobility and transconductance observed in a sample DQW indicates that this poor transport mechanism may result from an additional hole scattering effect at the Si/SiGe interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-05-15
著者
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Wu San
Department Of Electronic Engineering Cheng Shiu University
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Liu Chee
Department Of Electrical Engineering And Graduate Institute Of Electronics Engineering National Taiw
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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Liu Chee
Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan and Electronics Research and Service Organization, Industrial Technology Research Institute, Hsinchu 310, Taiwan
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Lin Yu
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Wu San
Department of Electronics Engineering, Cheng Shiu University, 840, Sheng Ching Rd., Neau-Song, Kaohsiung 833, Taiwan
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Chen Pang
Department of Materials Science and Engineering, Ming Shin University of Science and Technology, No. 1 Hsin Hsin Rd., Hsin Feng, Hsin Chu 304, Taiwan
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Chang Shoou
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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