Strained Si_<1-x>Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2000-06-15

著者

• WU San

  Department of Electronics Engineering, Cheng Shiu University

• Su Chia

  Department Of Electrical Engineering National Cheng Kung University

• Wu S

  Department Of Electronics Engineering Cheng Shiu University

• Wu San

  Department Of Electronics Engineering Cheng Shiu Institute Of Technology

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Chang Shoou

  Department Of Electrical Engineering National Cheng Kung University

• Chen Liang

  National Nano Device Laboratory

関連論文

• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
• Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
• High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel
• A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
• Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
• The Study of GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact Metals
• The Study of Metal-GaN Interface of Schottky Contacts with Different Metals
• Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
• Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
• Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
• Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
• Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

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