P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor

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概要

• 論文の詳細を見る
• 2003-12-01

著者

• LIN Yu

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• WU San

  Department of Electronics Engineering, Cheng Shiu University

• CHANG Shoou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• KOH Shinji

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• SHIRAKI Yasuhiro

  Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

• Wu S

  Department Of Electronics Engineering Cheng Shiu University

関連論文

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• Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well
• Growth Mechanism in the Metalorganic Vapor Phase Epitaxy of Metastable GaP_N_x Alloys: A Growth Interruption Study
• Arsenic Surfactant and Incorporation Effects on Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy
• Metalorganic Vapor Phase Epitaxy Growth of High Quality Cubic GaN on GaAs (100) Substrates
• High Quality Cubic GaN Growth on GaAs (100) Substrates by Metalorganic Vapor Phase Epitaxy
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Second-Harmonic Generation from GaP/AlP Multilayers on GaP(111)Substrates Based on Quasi-Phase Matching for the Fundamental Standing Wave
• New Semiconductor Second-Harmonic Generator Based on Quasi-Phase-Matching for Cavity-Enhanced Fundamental Standing Wave
• Fast Lateral Transport of Excitons in a GaAs/AlGaAs Quantum Well
• High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111) B Substrates
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• Polarization Characteristics of Crescent-Shaped Tensile-Strained GaAsP/AlGaAs Quantum Wire Lasers
• Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates ( Quantum Dot Structures)
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