Wu S | Department Of Electronics Engineering Cheng Shiu University
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概要
関連著者
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Wu S
Department Of Electronics Engineering Cheng Shiu University
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Wu San
Department Of Electronics Engineering Cheng Shiu Institute Of Technology
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WU San
Department of Electronics Engineering, Cheng Shiu University
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Wu San
Department Of Electronic Engineering Cheng Shiu University
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SHIRAKI Yasuhiro
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Chang S
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chang Shoou
Department Of Electrical Engineering National Cheng Kung University
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CHANG Shoou
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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KOH Shinji
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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Wang Yan
Department Of Electrical Engineering National Cheng Kung University
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Wang Yan
Department Of Cardiovascular Sciences Oita University School Of Medicine
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Shiraki Yasuhiro
School Of Fundamental Science And Technology Keio University
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Shiraki Y
Research Center For Silicon Nano-science Advanced Research Laboratories Musashi Institute Of Technol
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Shiraki Yasuhiro
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Wang Yan
Department Of Biology Graduate University Of Chinese Academy Of Sciences
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LIN Yu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Su Chia
Department Of Electrical Engineering National Cheng Kung University
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Wang S
National Cheng Kung Univ. Tainan Twn
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Wang Shui
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Wang Shui
Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University
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MIURA Hidetoshi
Research Center for Advanced Science and Technology, The University of Tokyo
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Wu San
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Miura Hidetoshi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Chien Pei
Department Of Electrical Engineering National Cheng Kung University
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Chen Liang
National Nano Device Laboratory
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Chang Shoou
Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien
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LEE Chun
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
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MIURA Atsushi
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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WU San
Electronics Department, Nan Jeon Junior College of Technology & Commerce
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HAN Tzung
Department of Electrical Engineering, National Cheng Kung University
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YEH Fang
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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CHENG Ching
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Han Tzung
Department Of Electrical Engineering National Cheng Kung University
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Yeh Fang
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Koh Shinji
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Cheng Ching
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Miura Atsushi
Research Center For Advanced Science And Technology (rcast) The University Of Tokyo
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Lee Chun
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Han Tzung
Electronics Department, Nan Jeon Junior College of Technology & Commerce
著作論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
- A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
- Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells