Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-04-30
著者
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Wang S
National Cheng Kung Univ. Tainan Twn
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Wang Shui
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Wang Shui
Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University
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Wu S
Department Of Electronics Engineering Cheng Shiu University
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Wu San
Department Of Electronics Engineering Cheng Shiu Institute Of Technology
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Wu San
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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YEH Fang
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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CHENG Ching
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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Yeh Fang
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Cheng Ching
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
関連論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
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- Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
- High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
- Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
- Boron Delta-Doped Si- and Ge_Si_-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
- A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
- Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
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- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
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