Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• Wang S

  National Cheng Kung Univ. Tainan Twn

• Wang Shui

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• TSAI Hao

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• SUN Shi

  R&D, Wafertech

関連論文

• Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
• Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization : Semiconductors
• Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
• Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
• Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization

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