Wang Shui | Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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概要
- 同名の論文著者
- Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung Universityの論文著者
関連著者
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Wang Shui
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Wang S
National Cheng Kung Univ. Tainan Twn
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Liou Bor
Department Of Computer Science And Information Engineering Wufeng Institute Of Technology
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Chang Shu
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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TSAI Hao
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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SUN Shi
R&D, Wafertech
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Tsai Hao
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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SUN Shi
R&D
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SHIAO Ming
Institute of Materials Engineering, National Chung Hsing University
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Shiao Ming
Institute Of Materials Engineering National Chung Hsing University
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Sun Shi
R&d
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Chang Shu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
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Liou Bor
Department of Computer Science and Information Engineering, Wufeng Institute of Technology, Chiayi 621, Taiwan, Republic of China
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Wang Shui
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan
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Wang Shui
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, Republic of China
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Sun Shi
R&D, Wafertech, Camas, WA 98607, USA
著作論文
- Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization : Semiconductors
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
- Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization