Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-05-15

著者

• Wang Shui

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Liou Bor

  Department Of Computer Science And Information Engineering Wufeng Institute Of Technology

• Chang Shu

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

関連論文

• Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
• Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization : Semiconductors
• Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
• High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
• High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates
• Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
• Publisher's Note: "High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates"

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