High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
スポンサーリンク
概要
- 論文の詳細を見る
In this work, the design and fabrication of Au/n-Si Schottky barrier diodes (SBDs) with various edge termination schemes including a reduce surface field (RESURF) type lateral super-junction (LSJ), polysilicon (poly-Si) floating, and guard rings are presented. A novel method using ion implantation through a poly-Si film for guard ring fabrication is proposed to prevent damage to the silicon surface. Experimental results show that the reverse leakage current of the proposed SBDs is reduced by about two orders and the breakdown voltage is increased by more than 4-fold those of conventional SBDs.
- 2005-09-10
著者
-
Wang Shui
Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University
-
Liou Bor
Department Of Computer Science And Information Engineering Wufeng Institute Of Technology
-
Chen Tron
Microelectronics Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan 600, Republic of China
-
Chen Chih
Microelectronics Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan 600, Republic of China
-
Uang Kai
Microelectronics Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan 600, Republic of China
-
Wang Shui
Microelectronics Laboratory, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Taiwan 600, Republic of China
関連論文
- Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
- Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
- Boron Delta-Doped Si- and Ge_Si_-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
- Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
- The Double-Metal Schottky Power Rectifier : An Adjustable Schottky Barrier Height Low-Power-Loss Diode
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
- High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
- High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates
- Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Publisher's Note: "High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates"