Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization

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概要

• 論文の詳細を見る
• 2000-08-28

著者

• Wang Shui

  Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University

• Tsai Hao

  Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University

• SUN S.

  R&D, Wafertech

関連論文

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• Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
• The Double-Metal Schottky Power Rectifier : An Adjustable Schottky Barrier Height Low-Power-Loss Diode
• Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
• High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures

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