Boron Delta-Doped Si- and Ge_<0.2>Si_<0.8>-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-09-15
著者
-
Wang Shui
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
-
Wang Shui
Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University
-
Wu San
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
-
CHUNG Hsiang
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
-
Chung Hsiang
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
関連論文
- High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
- Boron Delta-Doped Si- and Ge_Si_-Channel Metal Semiconductor Field-Effect Transistors Grown by Molecular Beam Epitaxy
- Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
- The Double-Metal Schottky Power Rectifier : An Adjustable Schottky Barrier Height Low-Power-Loss Diode
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
- High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures