High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1994-09-01
著者
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Wang Shui
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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Wang Shui
Microelectronics Lab. Dept. Of Electrical Engineering National Cheng Kung University
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Wu San
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
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LIU Chen
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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WU San
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
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WANG Shui
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
関連論文
- High-Performance Double δ-Doped Channel Si Metal Semiconductor Field-Effect Transistors
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- High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures