Publisher's Note: "High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates"
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概要
- 論文の詳細を見る
- The Japan Society of Applied Physicsの論文
- 2009-12-25
著者
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Liou Bor
Department Of Computer Science And Information Engineering Wufeng Institute Of Technology
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Liou Bor
Department of Computer Science and Information Engineering, Wufeng Institute of Technology, Chiayi 621, Taiwan, Republic of China
関連論文
- Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
- Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
- High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates
- Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Publisher's Note: "High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates"