High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates

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概要

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• In this paper, I describe an effective method of obtaining a high photovoltaic efficiency of InxGa1-xN/GaN-based solar cells with a multiple-quantum-well (MQW) structure using a SiCN/Si (111) substrate. The MQW region had a higher solar cell absorption than the non-MQW InxGa1-xN/GaN sample. Under an air mass 1.5 global solar spectrum, an average increase of 38.5% in the photovoltaic efficiency of the MQW sample over the control sample was observed. It was found that the device and fabrication technology developed in this study are applicable to the realization of solar cells with high open-circuit voltages ($V_{\text{oc}}$) of 2.92 to 3.16 V, high short-circuit current densities ($J_{\text{sc}}$) of 55.1 to 56.5 mA/cm2, and high fill factors of 89.5 to 91.8%.

• 2009-07-25

著者

• Liou Bor

  Department Of Computer Science And Information Engineering Wufeng Institute Of Technology

• Liou Bor

  Department of Computer Science and Information Engineering, Wufeng Institute of Technology, Chiayi (621), Taiwan, Republic of China

関連論文

• Hydrogen and Oxygen Plasma Effects on Polycrystalline Silicon Thin Films of Various Thicknesses
• Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• High Power Silicon Schottky Barrier Diodes with Different Edge Termination Structures
• High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates
• Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
• Publisher's Note: "High Photovoltaic Efficiency of InxGa1-xN/GaN-Based Solar Cells with a Multiple-Quantum-Well Structure on SiCN/Si(111) Substrates"

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