Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization : Semiconductors
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-11-15
著者
-
Wang S
National Cheng Kung Univ. Tainan Twn
-
Wang Shui
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
TSAI Hao
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
-
SUN Shi
R&D
-
SHIAO Ming
Institute of Materials Engineering, National Chung Hsing University
-
Tsai Hao
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
-
Shiao Ming
Institute Of Materials Engineering National Chung Hsing University
-
Sun Shi
R&d
関連論文
- Hydrogen and Oxygen Plasma Effects on Undoped and n-p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Schottky/Two-Dimensional Hole Gas Silicon Barrier Diodes with Single and Coupled Delta-Doped Wells
- Influence of Nitrogen Doping on the Barrier Properties of Sputtered Tantalum Carbide Films for Copper Metallization : Semiconductors
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization
- Hydrogen and Oxygen Plasma Effects on Undoped and n–p Compensation-doped Single- and Multilayer Polycrystalline Silicon Resistor Films
- Characterization of Tungsten Carbide as Diffusion Barrier for Cu Metallization