Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing

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概要

• 論文の詳細を見る

• Thin Ta_2O_5 films were prepared by low-pressure chemical vapor deposition (LPCVD) and subsequently annealed in O_2 ambient at various temperatures. It was found that the leakage current of the Ta_2O_5/SiO_x capacitor was controlled by the Ta_2O_5 layer when the annealing temperature was lower than 700℃. On the other hand, the leakage current was controlled by the interfacial oxide layer when the annealing temperature was higher than 700℃. It was also found that we could achieve an equivalent thin oxide thickness and a small leakage current at the same time from the Ta_2O_5/SiO_x capacitor with a suitable thermal annealing treatment. [DOI: 10.1143/JJAP.41.690]

• 社団法人応用物理学会の論文
• 2002-02-15

著者

• CHANG Shoou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• CHEN Jone

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi

• LIU Chun

  Department of Environmental Chemistry and Engineering, Interdisciplinary Graduate School of Science

• Chen Jone

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Chang Shoou

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Liaw Uang

  Department Of Electronic Engineering Chin-min College

• Liu Chun

  Department Of Electronic Engineering Nan-jeon Institute Of Technology Yan-hsui

• Chang Shoou

  Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien

• SUN Shi

  R&D, Wafertech

• LEE Jiann

  Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University

• Lee Jiann

  Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

• Sun Shi

  R&d Taiwan Semiconductor Manufacturing Company

• LIU Chun

  Department of Electrical Engineering, National Cheng Kung University

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