Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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CHEN Jone
Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi
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Wu Shien-yang
Logic Technology Division/r&d Taiwan Semiconductor Manufacturing Company
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Chen Jone
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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YANG Dao-Hong
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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LIN Chih-Yung
Logic Technology Division/R&D, Taiwan Semiconductor Manufacturing Company
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- GaN-Based Light Emitting Diodes with Si-Doped In_Ga_N/GaN Short Period Superlattice Current Spreading Layer
- Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
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