Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)
スポンサーリンク
概要
著者
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Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Huang Wei-Shiang
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Lee Ya-Jui
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Huang Meng-Ju
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Chen Chih-Yuan
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Lin Ying-Chia
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Chang Kuei-Fen
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Chen Huei-Haurng
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
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Yan Chin-Rung
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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- Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)