Characteristics of Lateral Diffused Metal--Oxide--Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
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概要
- 論文の詳細を見る
Characteristics of lateral diffused metal--oxide--semiconductor (LDMOS) transistors with gradual junction profile by self-alignment implant through dual thicknesses of screen oxide are presented in this letter. Compared with LDMOS transistors with traditional junction profile, this new device shows improved off-state breakdown voltage, less severe in Kirk effect, and wider electrical safe operating area; without sacrificing device drivability. Technology computer aided design (TCAD) simulation results reveal that this new device has smaller electric field both in off- and on-state bias conditions. Hot-carrier induced degradation of this new device under various stress conditions is also investigated and compared with that of the device with traditional junction profile.
- 2013-04-25
著者
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Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Yan Chin-Rung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Hsu Hao-Tang
PowerChip Technology Corporation, Hsinchu, Taiwan
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Lin Chung-Yi
PowerChip Technology Corporation, Hsinchu, Taiwan
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Liao Yu-Jie
PowerChip Technology Corporation, Hsinchu, Taiwan
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Yang Min-Ti
PowerChip Technology Corporation, Hsinchu, Taiwan
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Chen Chih-Yuan
PowerChip Technology Corporation, Hsinchu, Taiwan
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Lin Yin-Chia
PowerChip Technology Corporation, Hsinchu, Taiwan
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Chen Huei-Haurng
PowerChip Technology Corporation, Hsinchu, Taiwan
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Yan Chin-Rung
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
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