Yan Chin-Rung | Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
スポンサーリンク
概要
- Yan Chin-Rungの詳細を見る
- 同名の論文著者
- Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwanの論文著者
関連著者
-
Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
-
Yan Chin-Rung
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan
-
Yan Chin-Rung
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
-
Huang Wei-Shiang
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Lee Ya-Jui
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Huang Meng-Ju
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Chen Chih-Yuan
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Lin Ying-Chia
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Chang Kuei-Fen
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Chen Huei-Haurng
Device Technology Group, Powerchip Technology Corporation, Hsinchu 300, Taiwan
-
Hsu Hao-Tang
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Lin Chung-Yi
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Liao Yu-Jie
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Yang Min-Ti
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Chen Chih-Yuan
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Lin Yin-Chia
PowerChip Technology Corporation, Hsinchu, Taiwan
-
Chen Huei-Haurng
PowerChip Technology Corporation, Hsinchu, Taiwan
著作論文
- Characteristics of Lateral Diffused Metal--Oxide--Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
- Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
- Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)