Chen Jone | Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers

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著作論文

Transparent TiN Electrodes in GaN Metal-Semiconductor-Metal Ultraviolet Photodetectors(Semiconductors)
On the Carrier Concentration and Hall Mobility in GaN Epilayers : Semiconductors
Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
Effect of Mobility Degradation and Supply Voltage on NBTI Induced Drain Current Degradation
ZnMgSSe Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes : Semiconductors
Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
Characteristics and Improvement in Hot-Carrier Reliability of Sub-Micrometer High-Voltage Double Diffused Drain Metal–Oxide–Semiconductor Field-Effect Transistors
Mechanism and Modeling of On-Resistance Degradation in n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
Investigation of Hot-Carrier-Induced Degradation Mechanisms in p-Type High-Voltage Drain Extended Metal–Oxide–Semiconductor Transistors
Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors
Characteristics of Lateral Diffused Metal--Oxide--Semiconductor Transistors with Lightly Doped Drain Implantation through Gradual Screen Oxide
GaN-Based Light Emitting Diodes with Si-Doped In0.23Ga0.77N/GaN Short Period Superlattice Current Spreading Layer
Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths
Impact of Mobility Degradation and Supply Voltage on Negative-Bias Temperature Instability in Advanced p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
Characteristics of Sub-50 nm NAND Flash Devices with Various Self-Aligned Shallow Trench Isolation Depths (Special Issue : Advanced Plasma Science and Its Applications for Nitrides and Nanomaterials)

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