An Investigation on Hot-Carrier Reliability and Degradation Index in Lateral Diffused Metal–Oxide–Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
The hot-carrier-induced degradation in the high-voltage n-type lateral diffused metal–oxide–semiconductor (LDMOS) field-effect transistor is investigated. Interface state generation caused by hot-electron injection in the channel region is identified to be the main degradation mechanism. Since the gate current ($I_{\text{g}}$) consists mainly of the electron injection, $I_{\text{g}}$ correlates well with the hot-carrier lifetime of the device. The impact of varying device layout parameter on the performance and hot-carrier lifetime of the device are also evaluated. Such an analysis can achieve a better design of LDMOS transistors when considering both device performance and hot-carrier reliability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-04-25
著者
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Wu Kuo-ming
Taiwan Semiconductor Manufacturing Company
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LIU C.
Taiwan Semiconductor Manufacturing Company
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HSU S.
Taiwan Semiconductor Manufacturing Company
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Chen Jone
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chen Shiang-yu
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Lee J.
Institute Of Medical Science And Department Of Pediatrics Hallym University
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Tian Kuen-shiuan
Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University
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Wu Kuo-Ming
Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
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Huang Tsung-Yi
Taiwan Semiconductor Manufacturing Company, Hsinchu 300, Taiwan
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Chen Shiang-Yu
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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Tian Kuen-Shiuan
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan
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