Chang Shoou | Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
Investigation of Impact Ionization in Strained-Si nMOSFETs
Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

もっと見る

スポンサーリンク