Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-12-25

著者

• WU San

  Department of Electronics Engineering, Cheng Shiu University

• CHANG Shoou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• Wu San

  Department Of Electronic Engineering Cheng Shiu University

• Chang Shoou

  Institute Of Microelectronics & Department Of Electrical Engineering Center For Micro/nano Scien

• WANG Yen

  Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung Universi

• Wang Yen

  National Cheng Kung Univ. Tainan Twn

• Chang Shoou

  National Cheng Kung Univ. Tainan Twn

関連論文

• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Device Linear Improvement Using SiGe/Si Heterostructure Delta-Doped-Channel Field-Effect Transistors
• Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
• Strained Si_Ge_x Normal-Graded Channel P-Type Metal Oxide Semiconductor Field Effect Transistor
• High-Performance Doped-Channel Field-Effect Transistor Using Graded SiGe Channel
• Investigation of Impact Ionization in Strained-Si nMOSFETs
• A New Silicon Field-Effect Transistors with Two-Hole-Transport-Mode (HTM) Channels Grown by Molecular Beam Epitaxy (MBE)
• Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
• Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
• Tolerance Design of Passive Filter Circuits Using Genetic Programming(Electronic Circuits)
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Characterization of Oxide Tarps in 28 nm p-Type Metal--Oxide--Semiconductor Field-Effect Transistors with Tip-Shaped SiGe Source/Drain Based on Random Telegraph Noise
• Impact of SiN on Performance in Novel Complementary Metal–Oxide–Semiconductor Architecture Using Substrate Strained-SiGe and Mechanical Strained-Si Technology
• P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
• Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
• Evaluation of Interface Property and DC Characteristics Enhancement in Nanoscale n-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Stress Memorization Technique
• Hole Confinement and $1/ f$ Noise Characteristics of SiGe Double-Quantum-Well p-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Optimized Si-Cap Layer Thickness for Tensile-Strained-Si/ Compressively Strained SiGe Dual-Channel Transistors in 0.13 μm Complementary Metal Oxide Semiconductor Technology
• Investigation of Transport Mechanism for Strained Si n Metal–Oxide–Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate

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