Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• Su Y

  National Cheng Kung Univ. Tainan Twn

• CHANG Shoou

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University

• Su Yan

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng-kung University

• Lin I

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• CHEN Chin

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University

• CHI Gou

  Department of Physics, National Central University

• SHEU Jinn

  Department of Physics, National Central University

関連論文

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• A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
• Reactive Ion Etching of ZnS Films using a Gas Mixture of Methane/Hydrogen/Argon
• A 10-in. Diagonal ZnS:Mn TFEL Panel Fabricated by a Sequential Vacuum Deposition Apparatus
• Characteristics of Indium-Tin Oxide Thin Film Etched by Reactive Ion Etching
• ZnS Thin Films Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition
• Improvement in Characteristics of InGaAs/GaAs Quantum-Dot PIN Photodetectors with Antireflection Photonic Crystals
• Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure
• Triple Luminescence Peaks Observed in the InGaAsN/GaAs Single Quantum Well Grown by MOVPE
• Study of Electronic Properties by Persistent Photoconductivity Measurement in Ga_xIn_N_yAs_ Grown by MOCVD
• Low Temperature Activation of Mg-Doped GaN in O_2 Ambient : Semiconductors
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching
• Reactive Ion Etching of ZnSe, ZnSSe, ZnCdSe and ZnMgSSe by H_2/Ar and CH_4/H_2/Ar
• Electric Field Effect on ZnSe Thin Films Prepared by Metalorganic Chemical Vapor Deposition
• Current Density-Voltage Characteristics of AC Thin-Film Electroluminescent Devices with Different Dielectric-Phosphor Interfaces
• Effects of Insulating Layers and Active Layer on ZnS:Tb, F Thin-Film Electroluminescent Devices
• Effects of [H_2S]/[DMZn] Molar Ratio on ZnS Films Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• High Dielectric Constant of RF-Sputtered HfO_2 Thin Films
• Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
• Investigation of Impact Ionization in Strained-Si nMOSFETs
• Effects of Interfacial Oxide Layer for the Ta_2O_5 Capacitor After High-Temperature Annealing
• Surface Characteristics, Optical and Electrical Properties on Sol-Gel Synthesized Sn-Doped ZnO Thin Film
• The Variation of In_xGa_Sb Solid Compositions with the Vapor Phase Mole Fractions at Different Growth Pressures in Metal Organic Chemical Vapor Deposition
• Vertical High Quality Mirrorlike Facet of GaN-Based Device by Reactive Ion Etching

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