Improved Device Characteristics of InGaAsN Photodetectors Using MIMS Structure
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Su Y
National Cheng Kung Univ. Tainan Twn
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Chen W
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Chuang R.
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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SU Y.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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CHEN W.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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CHUANG R.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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HSU S.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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CHEN B.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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Chen B.
Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng
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Hsu S.
Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng
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Su Y.
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Techn
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Su Y.
Advanced Optoelectronic Technology Center National Cheng Kung University
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Chen W.
Institute Of Microelectronics Department Of Electrical Engineering And Advanced Optoelectronic Technology Center National Cheng Kung University
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Chuang R.
Advanced Optoelectronic Technology Center, Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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