Improvement in Linearity of Novel InGaAsN-Based High Electron Mobility Transistors
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概要
- 論文の詳細を見る
We have fabricated InGaAsN-based high electron mobility transistors (HEMTs) using InGaAsN as the channel layer. An extremely large gate-voltage swing (GVS) up to 4.2 V can be achieved by utilizing the large conduction band offset between the GaAs spacer layer and the InGaAsN channel layer. However, the poor channel mobility and current density as a result of nitrogen-induced electrically active defects limit the transconductance ($g_{\text{m}}$) performance. Attempts using various annealing temperatures have demonstrated that better device characteristics can be obtained via rapid thermal annealing at 700 °C. In this study, we investigate the effect of nitrogen-induced traps on the basis of Hall measurements and device characterizations of HEMTs. The improvement in GVS in the annealed samples is also discussed. Despite the relatively poor gain, InGaAsN HEMTs with excellent linearity performance after proper thermal annealing are expected to be compatible for novel InGaAsN-based optoelectronics integral circuits (OEICs).
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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CHEN W.
Advanced Optoelectronic Technology Center, Institute of Microelectronics, Department of Electrical E
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Chen W.
Department Of Civil Engineering Lehigh University
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Hsu S.
Advanced Optoelectronic Technology Center Institute Of Microelectronics Department Of Electrical Eng
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Su Y.
Advanced Optoelectronic Technology Center National Cheng Kung University
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Wu J.
Advanced Optoelectronic Technology Center, Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Chuang R.
Advanced Optoelectronic Technology Center, Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Hsu S.
Advanced Optoelectronic Technology Center, Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Chang S.
Advanced Optoelectronic Technology Center, Department of Electrical Engineering and Institute of Microelectronics, National Cheng Kung University, Tainan, Taiwan 70101, R.O.C.
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Chen W.
Department of Electrical Engineering, Da-Yeh University, 112 Shan-Jiau Rd, Da-Tsuen, Chang-Hua 515, Taiwan, R.O.C.
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