Epitaxial AlN Thin Film Surface Acoustic Wave Devices Prepared on GaN/Sapphire Using Low-Temperature Helicon Sputtering System

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概要

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• High-quality epitaxial AlN films have been deposited on GaN/sapphire using helicon sputtering at a temperature of 300 °C. The surface acoustic wave (SAW) characteristics, in terms of insertion loss, stopband rejection, and electromechanical coupling coefficient, of SAW devices fabricated on AlN/GaN/sapphire are much superior than those fabricated on GaN/sapphire. The investigation of environmental effects, including temperature and relative humidity, shows that the ambient stability can be improved with the deposition of an AlN film on GaN/sapphire. An oscillator fabricated using an AlN/GaN/sapphire-based SAW device was developed for application in sensors. The composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and utilize their semiconducting, optoelectronic, and piezoelectric properties.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-01-25

著者

• Lin Y.

  Department Of Materials Science And Engineering National Chiao Tung University

• Chen W.

  Department Of Civil Engineering Lehigh University

• Lin Chung

  Department Of Chemistry National Cheng Kung University

• Kao H.

  Department Of Chemistry Tamkang University

• Lin Hui-Feng

  Department of Electronic Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan

• Chien Wei-Cheng

  Department of Electronic Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan

• Chen Tzu

  Department of Electronic Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan

• Chyi J.-I.

  Department of Electrical Engineering, National Central University, Chungli 32023, Taiwan

• Hsu C.-H.

  National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan

• Chen Tzu

  Department of Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 33509, Taiwan, R.O.C.

• Lin Chung

  Department of Electronic Engineering, Chung Yuan Christian University, Chungli 32023, Taiwan

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