Study of Electronic Properties by Persistent Photoconductivity Measurement in GaxIn1-xNyAs1-y Grown by MOCVD
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概要
- 論文の詳細を見る
Electronic properties of GaInNAs thin films have been investigated by the temperature-dependent Hall-effect and persistent photoconductivity (PPC) measurements. The GaxIn1-xNyAs1-y thin films were grown by metal-organic chemical vapor deposition (MOCVD) on GaAs(100) substrates. High resolution X-ray diffraction (HR-XRD) and photoluminescence (PL) were used to determine the crystal quality. Compared with the N-free sample, the mobility of the GaInNAs sample quenched significantly due to the lattice defects induced by the small amount of nitrogen atoms incorporated during growth. The free carrier concentration of the GaInNAs samples was not affected by the increasing temperature ranging from 120 K to 400 K. Persistent photoconductivity (PPC) was also observed in this material, and the properties of PPC were found to depend on the temperature and nitrogen content. The relationship between trend toward saturation of the free carrier concentration of the temperature-dependent Hall measurement and PPC is also discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-15
著者
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CHEN W.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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HSU S.
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University
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Chen W.
Department Of Civil Engineering Lehigh University
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Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
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Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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Chuang R.
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Hsu S.
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Su Y.
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chang S.
Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, R.O.C.
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Chen W.
Department of Electrical Engineering, Southern Taiwan University of Technology, Tainan 710, Taiwan, R.O.C.
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