Highly strained oxide confined InGaAs VCSELs emitting in the 1.3im regions
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SUNG C.
Opto-Electronics and System Laboratory, Industrial Technology Research Institute
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YU H.
Institute of Microelectronics, Department of Electrical Engineering, and Advanced Optoelectronic Tec
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Chen I.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Lee T.
Opto-electronics & System Laboratory Industrial Technology Research Institute
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LU C.
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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CHIOU C.
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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LEE Z.
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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WANG J.
Opto-Electronics & System Laboratory, Industrial Technology Research Institute
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Chiou C.
Opto-electronics & System Laboratory Industrial Technology Research Institute
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Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
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Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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