High Brightness and Crack-free InGaN/GaN Light Emitting Diode With AlGaN Buffer Layer On Si (111)
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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CHANG S.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHEN W.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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SHEU J.
Institute of Electro-Optical Science & Engineering, National Cheng Kung University
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Chen W.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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HSU Y.
Institute of Microelectronics & Department of Electrical Engineering National Cheng Kung University
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CHU J.
Institute of Electro-Optical Science and Engineering National Cheng Kung University
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KUO C.
Epitech Technology Corporation
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Su Y.
Institute Of Microelectronics & Department Of Electrical Engineering National Cheng Kung Univers
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Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Chang S.
Institute Of Microelectronics And Department Of Electrical Engineering National Cheng Kung Universit
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Sheu J.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
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Chang S.
Institute Of Electro-optical Science And Engineering National Cheng Kung University
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