In_<0.53>Ga_<0.47>As/InP Modulation-Doped Heterostructures Grown by Liquid-Phase Epitaxy
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概要
- 論文の詳細を見る
In this paper we present the first report of the study of the characteristics of In_<0.53>Gs_<0.47>As/InP modulation-doped heerostructures grown by liquid-phase epitaxy. Electrical properties were studied by Hall and Shubnikov-de Haas Measurements. A series of doping levels in the InP layer was used to investigate the dependences of mobility and sub-band configuration on sheet carrier density. Mobility enhancements were observed at low temperatures according to Hall measurements. Enhanced electron mobilities were as high as 62000, 60200 and 7410 cm^2/Vs at 10, 77 and 300 K, respectively. These are comparable to those obtained by other epitaxial techniques, which indicates that liquid-phase epitaxy is capable of growing high-quality In_<0.53>Ga_<0.47>As/InP heterojunctions.
- 社団法人応用物理学会の論文
- 1988-06-20
著者
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Su Y.
Institute Of Electrical And Computer Engineering National Cheng Kung University
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DAI T.
Institute of Electrical and Computer Engineering, National Cheng Kung University
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